vishay siliconix dg2537, dg2538, dg2539 document number: 63370 s11-1551-rev. a, 01-aug-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 4 ? dual spst switches description the dg2537, dg2538, and dg2539 are low voltage, precision dual spst switches that can be operated in a single supply or in a dual supply configuration power supply with low power dissipation. the dg2537, dg2538 and dg2539 can switch both analog and digital signals within the power supply rail, and conduct well in both directions. fabricated with advance subm icron cmos process, these switches provide high precision low and flat on resistance, low leakage current, low parasitic capacitance, and low charge injection. the dg2537, dg2538 and dg2539 contain two independent single pole single throw (spst) switches. switch-1 and switch-2 are no rmally open for the dg2537 and normally closed for the dg2538. for the dg2539, switch-1 is normally open and switch-2 is normally closed with a break-before-make switching timing. the dg2537, dg2538 and dg25 39 are the ideal switches for use in low voltage instruments and healthcare devices, fitting the circuits of low voltage adc and dac, analog front end gain control, and signal path control. as a committed partner to the community and the environment, vishay siliconix manufactures this product with lead (pb)-free device termination. as a further sign of vishay siliconix's commitment, the dg2537, dg2538 and d2539 are fully rohs compliant and halogen-free. features ? halogen-free according to iec 61249-2-21 definition ? low and flat switch on resistance, 2.5 ? /typ ? low leakage and parasitic capacitance ? 366 mhz, - 3 db bandwidth ? latch-up current > 300 ma (jesd78) ? over voltage tolerant ttl/cmos compatible ? compliant to rohs directive 2002/95/ec applications ? healthcare and medical devices ? test instruments ? portable meters ? data acquisitions ? control and automation ? pdas and modems ? communication systems ? audio, video systems ? mechanical reed relay replacement functional block diagram and pin configuration dg2537, msop-10 top view no 1 com 1 in 2 gnd 1 2 3 4 v+ 5 10 9 8 7 6 no 2 com 2 in 1 v- dg2538, msop-10 top view 9 8 7 6 10 1 2 3 4 5 nc 1 com 1 in 2 gnd v+ nc 2 com 2 in 1 v- dg2539, msop-10 top view no 1 com 1 in 2 gnd 1 2 3 4 v+ 5 10 9 8 7 6 nc 2 com 2 in 1 v- truth table (dg2537, dg2538) logic dg2537 dg2538 switches 01off 10on truth table (dg2539) logic switch-1 switch-2 0offon 1onoff ordering information temperature range package part number - 40 c to 85 c msop-10 dg2537dq-T1-GE3 msop-10 dg2538dq-T1-GE3 msop-10 dg2539dq-T1-GE3
www.vishay.com 2 document number: 63370 s11-1551-rev. a, 01-aug-11 vishay siliconix dg2537, dg2538, dg2539 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. signals on nc, no, or com or in exceeding v+ will be clamped by inte rnal diodes. limit forward diode current to maximum curr ent ratings. b. all leads welded or soldered to pc board. c. derate 4 mw/c above 70 c. absolute maximum ratings parameter limit unit referenced v+ to gnd - 0.3 to 6 v in, com, nc, no a - 0.3 to (v+ + 0.3) continuous current (any terminal) 50 ma peak current (pulsed at 1 ms, 10 % duty cycle) 200 storage temperature (d suffix) - 65 to 150 c power dissipation (packages) b msop-10 c 320 mw specifications (v+ = 3 v, v- = 0 v) parameter symbol test conditions otherwise unless specified v+ = 3 v, v- = 0 v, 10 %, v in = 0.4 v or 1.5 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v no , v nc v com full 0 v+ v on-resistance r on v+ = 2.7 v, v- = 0 v, v com = 0 v to v+, i no , i nc = - 10 ma room full 6.5 10 ? r on flatness d r on flatness v+ = 2.7 v, v- = 0 v, v com = 1.1 v to 1.6 v, i no , i nc = - 10 ma room 0.4 r on match d r on match v+ = 2.7 v, v- = 0 v, v d = 1.1 v to 1.6 v, i d = - 10 ma room full 0.3 0.9 switch off leakage current i no(off) i nc(off) v+ = 3.3 v, v- = 0 v, v no , v nc = 1 v/3 v, v com = 3 v/1 v room full - 0.25 - 0.35 0.25 0.35 na i com(off) room full - 0.25 - 0.35 0.25 0.35 channel-on leakage current i com(on) v+ = 3.3 v, v- = 0 v, v no , v nc = v com = 1 v/3 v room full - 0.25 - 0.35 0.25 0.35 digital control input high voltage v inh full 2 v input low voltage v inl full 0.4 input capacitance d c in f = 1 mhz full 2.4 pf input current i inl or i inh v in = 0 or v+ full - 1 1 a dynamic characteristics tu r n - o n t i m e t on v no or v nc = 2 v, r l = 300 ? , c l = 35 pf, figures 1 and 2 room full 16 55 ns turn-off time t off room full 7 40 charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0 ? , figure 3 room 1.8 pc bandwidth d bw v+ = 3 v, r l = 50 ? , c l = 5 pf, - 3db room 319 mhz off-isolation d oirr r l = 50 ? , c l = 5 pf, f = 1 mhz room - 67 db crosstalk d x ta l k room - 92 off-isolation d oirr r l = 50 ? , c l = 5 pf, f = 10 mhz room - 47 crosstalk d x ta l k room - 90 source-off capacitance d c nc/no(off) v in = 0 or v+, f = 1 mhz room 8 pf drain-off capacitance d c com(off) room 9 channel-on capacitance d c on room 22 power supply power supply current i+ v in = 0 or v+, v+ = 3.3 v 1a
document number: 63370 s11-1551-rev. a, 01-aug-11 www.vishay.com 3 vishay siliconix dg2537, dg2538, dg2539 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications (v+ = 5 v, v- = 0 v) parameter symbol test conditions otherwise unless specified v+ = 5 v, v- = 0 v, 10 %, v in = 0.8 v or 2.4 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v no , v nc v com full 0 v+ v on-resistance r on v+ = 4.5 v, v- = 0 v, v com = 0 v to v+, i no , i nc = 10 ma room full 2.5 4.5 5 ? r on flatness d r on flatness v+ = 4.5 v, v- = 0 v,? v com = 1.3 v to 3 v, i no , i nc = 10 ma room 0.75 1.5 r on match d r on match v+ = 4.5 v, v- = 0 v, i d = 10 ma, v com = 1.3 v to 3 v room 0.2 0.9 switch off leakage current i no(off) i nc(off) v+ = 5.5 v, v- = 0 v, v no , v nc = 1 v/4.5 v, v com = 4.5 v/1 v room full - 0.25 - 0.35 0.25 0.35 na i com(off) room full - 0.25 - 0.35 0.25 0.35 channel-on leakage current i com(on) v+ = 5.5 v, v- = 0 v, v no , v nc = v com = 1 v/4.5 v room full - 0.25 - 0.35 0.25 0.35 digital control input high voltage v inh full 2.4 v input low voltage v inl full 0.8 input capacitance c in f = 1 mhz full 2.2 pf input current i inl or i inh v in = 0 or v+ full - 0.1 0.005 0.1 a dynamic characteristics tu r n - o n t i m e d t on v no or v nc = 3 v, r l = 300 ? , c l = 35 pf, figures 1 and 2 room full 17 30 40 ns turn-off time d t off room full 9 35 charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0 ? , figure 3 room 2.2 pc bandwidth d bw v+ = 5 v, r l = 50 ? , c l = 5 pf, - 3 db room 366 mhz off-isolation d oirr r l = 50 ? , c l = 5 pf, f = 1 mhz room - 67 db crosstalk d x ta l k room - 90 off-isolation d oirr r l = 50 ? , c l = 5 pf, f = 10 mhz room - 47 crosstalk d x ta l k room - 90 source-off capacitance d c nc/no(off) v in = 0 or v+, f = 1 mhz room 8 pf drain-off capacitance d c com(off) room 9 channel-on capacitance d c on room 22 power supply power supply range v+ 2.6 4.3 v power supply current i+ v in = 0 or v+, v+ = 5.5 v full 2a
www.vishay.com 4 document number: 63370 s11-1551-rev. a, 01-aug-11 vishay siliconix dg2537, dg2538, dg2539 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. room = 25 c, full = as determined by the operating suffix. b. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. guarantee by design, nor s ubjected to production test. e. v in = input voltage to perform proper function. f. not production tested. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (v+ = + 2.5 v, v- = - 2.5 v) parameter symbol test conditions otherwise unless specified v+ = + 2.5 v, v- = - 2.5 v, 10 %, v in = 0.8 v or 2.4 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range v no , v nc v com full v- v+ v on-resistance r on v+ = + 2.25 v, v- = - 2.25 v, v com = v- to v+, i no , i nc = 10 ma room full 3.6 4.5 5 ? r on flatness r on flatness v+ = + 2.25 v, v- = - 2.25 v, v com = 1.2 v, 0 v, i no , i nc = 10 ma room 0.7 1.5 r on match r on match v+ = + 2.25 v, v- = - 2.25 v, v com = 1.4 v, i no , i nc = 10 ma room 0.2 0.9 switch off leakage current i no(off) i nc(off) v+ = + 2.75 v, v- = - 2.75 v, v s = 2.5 v, v d = 2.5 v room full - 0.25 - 0.35 0.25 0.35 na i com(off) room full - 0.25 - 0.35 0.25 0.35 switch on leakage i com(on) v+ = + 2.75 v, v- = - 2.25 v, v s = v d = 2.5 v room full - 0.25 - 0.35 0.25 0.35 digital control input high voltage v inh full 2.4 v input low voltage v inl full 0.8 input capacitance c in f = 1 mhz full 2.2 pf input current i inl or i inh v in = 0 or v+ full - 0.1 0.1 a dynamic characteristics tu r n - o n t i m e d t on v no or v nc = 2 v, r l = 300 ? , c l = 35 pf room full 35 40 ns turn-off time d t off room full 20 25 charge injection d q inj c l = 1 nf, v gen = 0 v, r gen = 0 ? room 2.2 pc bandwidth d bw v+ = + 2.5 v, v- = - 2.5 v, r l = 50 ? , c l = 5 pf, - 3db room 366 mhz off-isolation d oirr v+ = + 2.5 v, v- = - 2.5 v, r l = 50 ? , c l = 5 pf, - 3db, f = 1 mhz room - 67 db crosstalk d x ta l k room - 90 off-isolation d oirr v+ = + 2.5 v, v- = - 2.5 v, r l = 50 ? , c l = 5 pf, - 3db, f = 10 mhz room - 47 crosstalk d x ta l k room - 90 source-off capacitance d c nc/no(off) v in = 0 or v+, f = 1 mhz room 6 pf drain-off capacitance d c com(off) room 12 channel-on capacitance d c on room 24 power supply power supply range v+ 1.25 2.75 v power supply i+ v in = 0 or v+, v+ = 2.5 v 2a
document number: 63370 s11-1551-rev. a, 01-aug-11 www.vishay.com 5 vishay siliconix dg2537, dg2538, dg2539 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) r on vs. v d and single supply voltage r on vs. analog voltage and temperature leakage current vs. temperature v d - analog v oltage ( v ) r o n - on-resistance ( ) 0 5 10 15 20 25 30 35 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 t = 25 c i n o/ n c = - 10 ma v + = 1. 8 v v + = 2.4 v v + = 2.7 v v + = 3.0 v v + = 3.3 v v + = 4.5 v v + = 5.0 v v + = 5.5 v v d - analog v oltage ( v ) r o n - on-resistance ( ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v + = 4.5 v i n o/ n c = - 10 ma - 40 c + 25 c + 8 5 c temperat u re (c) leakage c u rrent (pa) 0.1 1 10 100 - 60 - 40 - 20 0 20 40 60 8 0 100 120 v + = 5.5 v com(o n ) i i com(off) i n o(off) r on vs. analog voltage and temperature r on vs. analog voltage and temperature supply current vs. input switching frequency v d - analog v oltage ( v ) r o n - on-resistance ( ) 0 1 2 3 4 5 6 7 8 9 10 00.40. 8 1.2 1.6 2.0 2.4 2. 8 v + = 2.7 v i n o/ n c = - 10 ma - 40 c + 25 c + 8 5 c 0 1 2 3 4 5 - 2.5 - 2 - 1.5 - 1 - 0.5 0 0.5 1 1.5 2 2.5 r on - on-resistance ( ) v com - analog voltage (v) v = 2.25 v in o /n c = - 10 ma + 85 c + 25 c - 40 c inp u t s w itching fre qu ency (hz) i+ - s u pply c u rrent (a) 10 ma 1 ma 100 a 10 a 1 a 100 na 10 na 1 na 100 pa 10 100 1k 10k 100k 1m 10m v + = 1. 8 v v + = 3.0 v v + = 3.3 v v + = 5.0 v v + = 5.5 v
www.vishay.com 6 document number: 63370 s11-1551-rev. a, 01-aug-11 vishay siliconix dg2537, dg2538, dg2539 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) test circuits switching threshold vs. supplz voltage insertion loss vs. frequency v + - s u pply v oltage ( v ) v t - s w itching threshold ( v ) 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1. 8 1.9 2.0 2.1 2.2 1.5 2.0 2.5 3.0 3. 5 4.0 4.5 5.0 5.5 v il v ih - 8 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 loss (db) 1 10 100 1000 10 000 fre qu ency (mhz) crosstalk vs. frequency off isolation vs. frequency - 100 - 90 - 8 0 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 crosstalk (db) 1 10 100 1000 fre qu ency (mhz) - 100 - 90 - 8 0 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 off isolation (db) 1 10 100 1000 fre qu ency (mhz) figure 1. single supply switching time v o = v s r l r l + r ds(on) in gnd v+ r l 300 ? c l 35 pf v o 0 v v in = 3 v v s = 2 v + 5 v 50 % 90 % t r < 20 ns t f < 20 ns t off t on 3 v 0 v v s v o logic input switch input switch output sd v-
document number: 63370 s11-1551-rev. a, 01-aug-11 www.vishay.com 7 vishay siliconix dg2537, dg2538, dg2539 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits figure 2. dual supply switching time v o = v s r l r l + r ds(on) in gnd v+ r l 300 ? c l 35 pf v o - 2.5 v v in = 2 v v s = 2 v + 2.5 v 50 % 90 % t r < 20 ns t f < 20 ns t off t on 2 v 0 v v s v o logic input switch input switch output sd v- figure 3. charge injection + 5 v 0 v s d in gnd v+ v- v o c l 1000 pf 3 v v g r g v o on off on ? v o in x ? v o = measured voltage error due to charge injection the charge injection in coulombs is ? q = c l x ? v o figure 4. off-isolation v s v o c s d in gnd v- c v+ 0 v r l r g = 50 ? v in = 0 v/3 v off isolation = 20 log v s v o + 5 v figure 5. channel off/on capacitance nc or no f = 1 mhz in com gnd 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent 10 nf 5 v v+ v+ 10 nf v- 0 v
www.vishay.com 8 document number: 63370 s11-1551-rev. a, 01-aug-11 vishay semiconductors dg2537, dg2538, dg2539 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63370 . figure 6. channel to channel crosstalk x talk = 20 log v s v o v s v o c s 1 g n d v - c v + 0 v r g = 50 v i n = 0 v /3 v + 5 v c = rf b ypass s 2 i n 1 i n 2 d 1 d 2 r l 50 n c v i n = 0 v /3 v
notes: 1. die thickness allowable is 0.203 0.0127. 2. dimensioning and tolerances per ansi.y14.5m-1994. 3. dimensions ?d? and ?e 1 ? do not include mold flash or protrusions, and are measured at datum plane -h- , mold flash or protrusions shall not exceed 0.15 mm per side. 4. dimension is the length of terminal for soldering to a substrate. 5. terminal positions are shown for reference only. 6. formed leads shall be planar with respect to one another within 0.10 mm at seating plane. 7. the lead width dimension does not include dambar protrusion. allowable dambar protrusion shall be 0.08 mm total in excess of the lead width dimension at maximum material condition. dambar cannot be located on the lower radius or the lead foot. minimum space between protrusions and an adjacent lead to be 0.14 mm. see detail ?b? and section ?c-c?. 8. section ?c-c? to be determined at 0.10 mm to 0.25 mm from the lead tip. 9. controlling dimension: millimeters. 10. this part is compliant with jedec registration mo-187, variation aa and ba. 11. datums -a- and -b- to be determined datum plane -h- . 12. exposed pad area in bottom side is the same as teh leadframe pad size. 5 n n-1 a b c 0.20 (n/2) tips) 2x n/2 2 1 0.60 0.50 0.60 e top view e see detail ?b? -h- 3 d -a- seating plane a 1 a 6 c 0.10 side view 0.25 bsc 4 l -c- seating plane 0.07 r. min 2 places parting line detail ?a? (scale: 30/1) 0.48 max detail ?b? (scale: 30/1) dambar protrusion 7 c 0.08 m b s a s b b 1 with plating base metal c 1 c section ?c-c? scale: 100/1 (see note 8) see detail ?a? a 2 0.05 s c c ? 3 e 1 -b- end view e1 0.95 package information vishay siliconix document number: 71245 12-jul-02 www.vishay.com 1 msop: 10?leads jedec part number: mo-187, (variation aa and ba) n = 10l millimeters dim min nom max note a - - 1.10 a 1 0.05 0.10 0.15 a 2 0.75 0.85 0.95 b 0.17 - 0.27 8 b 1 0.17 0.20 0.23 8 c 0.13 - 0.23 c 1 0.13 0.15 0.18 d 3.00 bsc 3 e 4.90 bsc e 1 2.90 3.00 3.10 3 e 0.50 bsc e 1 2.00 bsc l 0.40 0.55 0.70 4 n 10 5 0 4 6 ecn: t-02080?rev. c, 15-jul-02 dwg: 5867
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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